| PART |
Description |
Maker |
| PBHV8540Z |
0.5A NPN high-voltage low VCEsat(BISS) transistor
|
NXP Semiconductors
|
| PBHV9040Z |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8115T |
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8140Z |
500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8118T |
180 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBSS5250T PBSS5250T215 |
50 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
50 V, 2 A PNP low VCEsat (BISS) transistor
50 V 2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PBSS5140S PBSS4140S_1 PBSS4140S |
40 V low VCEsat PNP transistor
From old datasheet system
40 V low VCEsat NPN transistor
|
NXP Semiconductors
Philips Semiconductors
|
| TSA5888CYRMG |
Low Vcesat PNP Transistor High allowable power dissipation.
|
Taiwan Semiconductor Company, Ltd
|
| PBSS2515M PBSS2515M315 |
15 V. 0.5 A NPN low VCEsat (BISS) transistor
15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| PBSS3540M PBSS3540M315 |
40 V, 0.5 A PNP low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
